1. Identificação | |
Tipo de Referência | Artigo em Evento (Conference Proceedings) |
Site | mtc-m16c.sid.inpe.br |
Código do Detentor | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identificador | 8JMKD3MGP8W/34C6E7E |
Repositório | sid.inpe.br/mtc-m18@80/2008/12.08.17.59 |
Repositório de Metadados | sid.inpe.br/mtc-m18@80/2008/12.08.17.59.04 |
Última Atualização dos Metadados | 2018:06.04.04.05.52 (UTC) administrator |
Chave Secundária | INPE--PRE/ |
Chave de Citação | MirandaBalRibBelFer:2008:NaGrSi |
Título | Nanodiamond growth on silicon substrate through the etching of reticulated vitreous carbon produced at different temperatures |
Ano | 2008 |
Data de Acesso | 18 maio 2024 |
Tipo Secundário | PRE CN |
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2. Contextualização | |
Autor | 1 Miranda, C. R. B. 2 Baldan, Maurí 3 Ribeiro, cio 4 Beloto, Antonio Fernando 5 Ferreira, Neidenei Gomes |
Grupo | 1 LAS-CTE-INPE-MCT-BR 2 LAS-CTE-INPE-MCT-BR 3 LAS-CTE-INPE-MCT-BR 4 LAS-CTE-INPE-MCT-BR |
Afiliação | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 Instituto Nacional de Pesquisas Espaciais (INPE) 4 Instituto Nacional de Pesquisas Espaciais (INPE) |
Nome do Evento | Encontro SBPMat, 7. |
Localização do Evento | Guarujá, SP |
Data | 28 set. - 02 out. |
Título do Livro | Anais |
Tipo Terciário | Poster |
Histórico (UTC) | 2008-12-08 17:59:04 :: simone -> administrator :: 2018-06-04 04:05:52 :: administrator -> marciana :: 2008 |
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3. Conteúdo e estrutura | |
É a matriz ou uma cópia? | é a matriz |
Estágio do Conteúdo | concluido |
Transferível | 1 |
Tipo do Conteúdo | External Contribution |
Palavras-Chave | nanodiamond reticulated vitreous carbon chemical vapor deposition |
Resumo | Nanocrystalline diamond (NCD) films, formed on silicon substrate, through the etching of solid carbon, produced at different temperatures, was investigated. Reticulated vitreous carbon (RVC) produced at different heat treatment temperatures (HTT) of 1300, 1500 and 2000 ¨¬C was used to compare its influence on the NCD growth in a hot filament chemical vapor deposition reactor (CVD). In this chemical vapor deposition process a piece of RVC was used, just below the silicon substrate, as an additional solid source of hydrocarbon, that ensures the production of pertinent carbon growth species like CH3 directly on silicon. This hydrocarbon amount was associated to the RVC microstructure controlled by its graphitization index. This procedure showed to be determinant to grow diamond grains uniformly on the silicon substrate. The films were deposited at 700 ¨¬C substrate temperature using 200 sccm gas flows. The mixture of CH4 varying from 0 to 1.0 vol. % in Ar/H2 was also used keeping the Ar concentration in 90 vol.%. NCD Scanning Electron Microscopy images showed faceted nanograins with uniform surface texture covering all the substrate. Raman measurements showed the D and G bands, as well as the typical two shoulders at 1150 and 1490 cm-1 attributed to NCD. The crystalline structures of these films, analyzed by X-ray diffraction, showed a main diamond peak of (111) orientation with 2¥è = 43.9¡Æ and peaks of (220) and (311) diamond reflection at 2¥è = 75.5¡Æ and 91.4¡Æ respectively. From Sherrer¡¯s formula the average size was evaluated in the range of 5 up to 20 nm. From X-ray photoelectron spectroscopy we have quantified the surface composition of the RVC and the formed diamond film. The composition of the RVC showed to play an important role in the CVD synthesis of diamond. |
Área | FISMAT |
Arranjo | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Nanodiamond growth on... |
Conteúdo da Pasta doc | não têm arquivos |
Conteúdo da Pasta source | não têm arquivos |
Conteúdo da Pasta agreement | não têm arquivos |
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4. Condições de acesso e uso | |
Idioma | en |
Grupo de Usuários | simone administrator |
Visibilidade | shown |
Permissão de Leitura | allow from all |
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5. Fontes relacionadas | |
Unidades Imediatamente Superiores | 8JMKD3MGPCW/3ESR3H2 |
Acervo Hospedeiro | sid.inpe.br/mtc-m18@80/2008/03.17.15.17 |
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6. Notas | |
Campos Vazios | archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination documentstage doi e-mailaddress edition editor electronicmailaddress format isbn issn label lineage mark mirrorrepository nextedition notes numberoffiles numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress readergroup resumeid rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle size sponsor subject targetfile tertiarymark type url versiontype volume |
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7. Controle da descrição | |
e-Mail (login) | marciana |
atualizar | |
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